PIC16F870_13 Datasheet, PDF (120/172 Pages) Microchip Technology – 28/40-Pin, 8-Bit CMOS FLASH Microcontrollers

PIC16F870/871
14.1 DC Characteristics: PIC16F870/871 (Industrial, Extended)
PIC16LF870/871 (Commercial, Industrial) (Continued)
PIC16LF870/871
(Commercial, Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +85°C for Industrial
0°C  TA  +70°C for Commercial
PIC16F870/871
(Industrial, Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +85°C for Industrial
-40°C  TA  +125°C for Extended
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
IDD Supply Current^(2,5)
D010
D010A
PIC16LF870/871 —
—
0.6 2.0 mA XT, RC osc configuration
FOSC = 4 MHz, VDD = 3.0V (Note 4)
20 35 A LP osc configuration
FOSC = 32 kHz, VDD = 3.0V, WDT disabled
D010
D013
PIC16F870/871 —
—
—
1.6 4 mA XT, RC osc configuration
FOSC = 4 MHz, VDD = 5.5V (Note 4)
7 15 mA HS osc configuration
FOSC = 20 MHz, VDD = 5.5V, -40C to +85C
7 15 mA HS osc configuration
FOSC = 10 MHz, VDD = 5.5V, -40C to +125C
D015* IBOR Brown-out Reset
Current⁽⁶⁾
— 85 200 A BOR enabled, VDD = 5.0V
IPD Power-down Current^(3,5)
D020
D021
D021A
PIC16LF870/871 —
—
—
7.5 30 A VDD = 3.0V, WDT enabled, -40C to +85C
0.8 4.5 A VDD = 3.0V, WDT disabled, 0C to +70C
0.9 5 A VDD = 3.0V, WDT disabled, -40C to +85C
D020
D20A
D021
D021A
D21B
PIC16F870/871 —
—
—
—
—
10.5 42
10.5 60
1.5 16
1.5 19
1.5 30
A VDD = 4.0V, WDT enabled, -40C to +85C
A VDD = 4.0V, WDT enabled, -40C to +125C
A VDD = 4.0V, WDT disabled, -0C to +70C
A VDD = 4.0V, WDT disabled, -40C to +85C
A VDD = 4.0V, WDT disabled, -40C to +125C
D023* IBOR Brown-out Reset
Current⁽⁶⁾
— 85 200 A BOR enabled, VDD = 5.0V
* These parameters are characterized but not tested.
† Data in "Typ" column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: This is the limit to which VDD can be lowered without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O
pin loading and switching rate, oscillator type, internal code execution pattern and temperature also have
an impact on the current consumption.
The test conditions for all IDD measurements in active Operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to VDD
MCLR = VDD; WDT enabled/disabled as specified.
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS.
4: For RC osc configuration, current through REXT is not included. The current through the resistor can be
estimated by the formula Ir = VDD/2REXT (mA) with REXT in k.
5: Timer1 oscillator (when enabled) adds approximately 20 A to the specification. This value is from
characterization and is for design guidance only. This is not tested.
6: The  current is the additional current consumed when this peripheral is enabled. This current should be
added to the base IDD or IPD measurement.
7: When BOR is enabled, the device will operate correctly until the VBOR voltage trip point is reached.
DS30569C-page 120
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