DD28F032SA Datasheet, PDF (42/49 Pages) Intel Corporation – 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY

DD28F032SA
E
6.10 AC Characteristics for Page Buffer Write Operations⁽¹⁾ (Continued)
V_CC = 5.0V ± 0.5V, 5.0V ± 0.25V, T_A = 0°C to +70°C
Versions
DD28F032SA-070 DD28F032SA-080 DD28F032SA-100
Symbol Parameter Notes Min Typ Max Min Typ Max Min Typ Max Unit
t_AVAV
Write Cycle
70
Time
80
100
ns
t_ELWL
CE_X# Setup to
0
0
0
ns
WE# Going
Low
t_AVWL
Address Setup
3
0
0
0
ns
to WE# Going
Low
t_DVWH
Data Setup to
2
50
50
50
ns
WE# Going
High
t_WLWH
WE# Pulse
40
50
50
ns
Width
t_WHDX
Data Hold from
2
0
0
0
ns
WE# High
t_WHAX
Address Hold
2
10
10
10
ns
from WE# High
t_WHEH
CE_X# Hold from
10
10
10
ns
WE# High
t_WHWL
WE# Pulse
30
30
50
ns
Width High
t_GHWL
Read Recovery
0
0
0
ns
before Write
t_WHGL
Write Recovery
60
65
80
ns
before Read
NOTES:
For 28F016SA No. 1: CE_X # is defined as the latter of CE₀# or CE₁# going low or the first of CE₀# or CE₁# going high.
For 28F016SA No. 2: CE_X # is defined as the latter of CE₀# or CE₂# going low or the first of CE₀# or CE₂# going high.
1. These are WE#-controlled write timings, equivalent CE_X#-controlled write timings apply.
2. Sampled, not 100% tested.
3. Address must be valid during the entire WE# low pulse or the entire CE_X # low pulse (for CE_X #-controlled write timings).
42