DD28F032SA Datasheet, PDF (37/49 Pages) Intel Corporation – 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY

E
DD28F032SA
6.9 AC Characteristics for CE_X#—Controlled Command Write Operations⁽¹⁾
V_CC = 3.3V ± 0.3V, T_A = 0°C to +70°C
Versions
DD28F032SA-150
Symbol
Parameter
Notes Min Typ
Max Unit
t_AVAV
t_VPEH
t_PHWL
t_WLEL
t_AVEH
t_DVEH
t_ELEH
t_EHDX
t_EHAX
t_EHWH
t_EHEL
t_GHEL
t_EHRL
t_RHPL
Write Cycle Time
V_PP Setup to CE_X# Going High
RP# Setup to WE# Going Low
WE# Setup to CE_X# Going Low
Address Setup to CE_X# Going High
Data Setup to CE_X# Going High
CE_X# Pulse Width
Data Hold from CE_X# High
Address Hold from CE_X# High
WE# Hold from CE_X# High
CE_X# Pulse Width High
Read Recovery before Write
CE_X# High to RY/BY# Going Low
RP# Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY/BY# High
150
3
100
480
0
2,6
75
2,6
85
75
2
10
2
10
10
75
0
3
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
100
ns
ns
t_PHEL
RP# High Recovery to CE_X# Going Low
1
µs
t_EHGL
Write Recovery before Read
120
ns
t_QVVL
V_PP Hold from Valid Status Register
0
µs
(CSR, GSR, BSR) Data and RY/BY# High
t_EHQV1
t_EHQV2
Duration of Word/Byte Program Operation
Duration of Block Erase Operation
4,5
5
4
0.3
9
Note 7 µs
10
sec
37