DD28F032SA Datasheet, PDF (39/49 Pages) Intel Corporation – 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY

E
DD28F032SA
6.9 AC Characteristics for CE_X#—Controlled Command Write Operations⁽¹⁾
(Continued)
V_CC = 5.0V ± 0.5V, 5.0V ± 0.25V, T_A = 0°C to +70°C
Versions
VCC ± 5% DD28F032SA-070
Unit
VCC ± 10%
DD28F032SA-080 DD28F032SA-100
Sym Parameter
Notes Min Typ Max Min Typ Max Min Typ Max
tPHEL
RP# High
Recovery to
1
1
1
µs
CEX#
Going Low
tEHGL
Write
Recovery
60
65
80
ns
before Read
tQVVL
VPP Hold from
Valid Status
0
0
0
µs
Register
(CSR, GSR,
BSR) Data at
RY/BY# High
tEHQV1
Duration of
Word/Byte
Program
4,5
4.5 6 Note 4.5 6 Note 4.5 6 Note µs
7
7
7
Operation
tEHQV2
Duration of
Block Erase
4
0.3
10 0.3
10 0.3
10 sec
Operation
NOTES:
For 28F016SA No. 1: CE_X# is defined as the latter of CE₀# or CE₁# going low or the first of CE₀# or CE₁# going high.
For 28F016SA No. 2: CE_X# is defined as the latter of CE₀# or CE₂# going low or the first of CE₀# or CE₂# going high.
1. Read timings during data program and block erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, but not 100% tested.
4. Data program/block erase durations are measured to valid Status Register data.
5. Word/byte program operations are typically performed with 1 programming pulse.
6. Address and data are latched on the rising edge of CE_X# for all command write operations.
7. This information will be available in a technical paper. Please call Intel’s Applications Hotline or your local sales office for
more information.
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