DD28F032SA Datasheet, PDF (25/49 Pages) Intel Corporation – 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY

E
DD28F032SA
6.4 DC Characteristics (Continued)
V_CC = 3.3V ± 0.3V, T_A = 0°C to +70°C
3/5# Pin Set High for 3.3V Operations
Symbol
Parameter
Notes Min Typ Max Units
Test Conditions
I_PPW
V_PP Program
1
Current for Word or
Byte
10
15
mA ^VPP ^{= V}PPH
Program in Progress
I_PPE
V_PP Block Erase
1
Current
4
10
mA ^VPP ^{= V}PPH
Block Erase in Progress
I_PPES
V_PP Erase
1
Suspend Current
130 400
µA ^VPP ^{= V}PPH
Block Erase Suspended
V_IL
Input Low Voltage
V_IH
Input High Voltage
–0.3
2.0
0.8
V
V_CC
V
± 0.3
V_OL
V_OH1
V_OH2
V_PPL
Output Low Voltage
Output High
Voltage
V_PP during Normal
Operations
2.4
V_CC
– 0.2
3
0.0
0.4
V
V_CC = V_CC Min
I_OL = 4 mA
V
V_CC = V_CC Min
I_OH = –2.0 mA
V_CC = V_CC Min
I_OH = –100 µA
6.5
V
V_PPH
V_PP during
Program/Erase
Operations
11.4 12.0 12.6 V
V_LKO
V_CC Program/Erase
2.0
V
Lock Voltage
NOTES:
1. All current are in RMS unless otherwise noted. Typical values at V_CC = 3.3V, V_PP = 12.0V, T = 25°C. These currents are
valid for all product versions (package and speeds).
2. I_CCES is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum
of I_CCES and I_CCR.
3. Block erases, word/byte programs and lock block operations are inhibited when V_PP = V_PPL and not guaranteed in the
range between V_PPH and V_PPL.
4. Automatic Power Savings (APS) reduces I_CCR to <1 mA in static operation.
5. CMOS Inputs are either V_CC ± 0.2V or GND ± 0.2V. TTL Inputs are either V_IL or V_IH.
6. CE_X# = CE₁# or CE₂#.
7. If operating with TTL levels, add 4 mA of VCC Standby Current to max I_CCR1, I_CCR2, I_CCW, I_CCE and I_CCES.
8. Standby current levels are not reached when putting the chip in standby mode immediately after reading the page buffer.
Default the device into read array or read Status Register mode before entering standby to ensure standby current levels.
25