DD28F032SA Datasheet, PDF (33/49 Pages) Intel Corporation – 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY

E
DD28F032SA
6.8 AC Characteristics for WE#—Controlled Command Write Operations⁽¹⁾
V_CC = 3.3V ± 0.3V, T_A = 0°C to +70°C
Versions
DD28F032SA-150
Symbol
Parameter
Notes Min Typ
Max Unit
t_AVAV
t_VPWH
t_PHEL
t_ELWL
t_AVWH
t_DVWH
t_WLWH
t_WHDX
t_WHAX
t_WHEH
t_WHWL
t_GHWL
t_WHRL
t_RHPL
Write Cycle Time
V_PP Setup to WE# Going High
RP# Setup to CE_X# Going Low
CE_X# Setup to WE# Going Low
Address Setup to WE# Going High
Data Setup to WE# Going High
WE# Pulse Width
Data Hold from WE# High
Address Hold from WE# High
CE_X# Hold from WE# High
WE# Pulse Width High
Read Recovery before Write
WE# High to RY/BY# Going Low
RP# Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY/BY# High
150
3
100
480
10
2,6
75
2,6
85
75
2
10
2
10
10
75
0
3
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
100
ns
ns
t_PHWL
RP# High Recovery to WE# Going Low
1
µs
t_WHGL
Write Recovery before Read
120
ns
t_QVVL
V_PP Hold from Valid Status Register
0
µs
(CSR, GSR, BSR) Data and RY/BY# High
t_WHQV1
t_WHQV2
Duration of Word/Byte Program Operation
Duration of Block Erase Operation
4,5
5
4
0.3
9
Note 7 µs
10
sec
33