DD28F032SA Datasheet, PDF (24/49 Pages) Intel Corporation – 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY

DD28F032SA
E
6.4 DC Characteristics
V_CC = 3.3V ± 0.3V, T_A = 0°C to +70°C
3/5# = Pin Set High for 3.3V Operations
Symbol
Parameter
Notes Min Typ Max Units
Test Conditions
I_IL
Input Load Current
1
I_LO
Output Leakage
Current
1
I_CCS
V_CC Standby
Current
1,5,6,8
I_CCD
I_CCR1
V_CC Deep Power-
1
Down Current
V_CC Read Current 1,4,5,6
±2
± 20
100 200
2
8
2
10
25 30
26 34
µA ^VCC ^{= V}CC ^Max
V_IN = V_CC or GND
µA ^VCC ^{= V}CC ^Max
V_IN = V_CC or GND
µA ^VCC ^{= V}CC ^Max
CE₀#, CE_X#, RP#, = V_CC ±
0.2V
BYTE#, WP#, 3/5# = V_CC ±
0.2V or GND ± 0.2V
mA ^VCC^{= V}CC ^Max
CE₀#, CE_X#, RP# = V_IH
BYTE#, WP#, 3/5# = V_IH or
V_IL
µA ^{RP# = GND ± 0.2V}
BYTE# = V_CC ± 0.2V or GND
± 0.2V
mA ^VCC ^{= V}CC ^Max
CMOS: CE₀#, CE_X# = GND
± 0.2V, BYTE# = GND ±
0.2V or V_CC ± 0.2V,
Inputs = GND ± 0.2V or
V_CC ± 0.2V
f = 6.67 MHz, I_OUT = 0 mA
mA ^{TTL: CE}0^{#, CE}X^{# = V}IL^,
BYTE# = V_IL or V_IH’
Inputs = V_IL or V_IH
f = 6.67 MHz, I_OUT = 0 mA
I_CCW
V_CC Program
1,7
Current for Word or
Byte
8
12 mA Program in Progress
I_CCE
I_CCES
V_CC Block Erase
Current
V_CC Erase
Suspend Current
1,7
1,2,6,7
6
12 mA Block Erase in Progress
3
6
mA ^CE0^{#, CE}X^{# = V}IH
Block Erase Suspended
IPPS
V_PP Standby/
1
I_PPR
Read Current
I_PPD
V_PP Deep Power-
Down Current
1
± 2 ± 20
130 400
0.4 10
µA V_PP ≤ V_CC
µA V_PP > V_CC
µA RP# = GND ± 0.2V
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