BFP842ESD Datasheet, PDF (9/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

3
Maximum Ratings
BFP842ESD
Maximum Ratings
Table 3-1 Maximum Ratings at T_A = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Max.
Collector emitter voltage
V_CEO
–
3.25
V
2.9
T_A = 25 °C
T_A = -40 °C
Open base
Collector emitter voltage¹⁾
V_CES
–
3.25
V
2.9
T_A = 25 °C
T_A = -40 °C
E-B short circuited
Collector base voltage²⁾
V_CBO
–
4.1
V
T_A = 25 °C
3.5
T_A = -40 °C
Open emitter
Base current
Collector current
RF input power
ESD stress pulse
I_B
-5
I_C
–
P_RFin
–
V_ESD
-1
3
mA
40
mA
16
dBm
1
kV
HBM, all pins, acc. to
JESD22-A114
Total power dissipation³⁾
P_tot
–
120
mW
T_S ≤ 111°C
Junction temperature
T_J
–
150
Storage temperature
T_Stg
-55
150
°C
1) V_CES is identical to V_CEO due to design
2) V_CBO is similar to V_CEO due to design
3) T_S is the soldering point temperature. T_S is measured on the emitter lead at the soldering point of the pcb.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Data Sheet
9
Revision 1.1, 2013-04-11