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| BFP842ESD Datasheet, PDF (11/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor | |||
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5
Electrical Characteristics
BFP842ESD
Electrical Characteristics
5.1
DC Characteristics
Table 5-1 DC Characteristics at TA = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage V(BR)CEO
Min.
3.25
Collector emitter leakage current
ICES
Collector base leakage current
ICBO
Emitter base leakage current
IEBO
DC current gain
hFE
150
5.2
General AC Characteristics
Values
Typ. Max.
3.7
400
400
10
260 450
Unit Note / Test Condition
V
IC = 1 mA, IB = 0
Open base
nA
VCE = 2 V, VBE = 0
E-B short circuited
nA VCB = 2 V, IE = 0
Open emitter
μA VEB = 0.5 V, IC = 0
Open collector
VCE = 2.5 V, IC = 15 mA
Pulse measured
Table 5-2 General AC Characteristics at TA = 25 °C
Parameter
Symbol
Min.
Transition frequency
fT
Collector base capacitance
CCB
Collector emitter capacitance
CCE
Emitter base capacitance
CEB
Values
Typ. Max.
57
64
0.46
0.44
Unit Note / Test Condition
GHz
fF
pF
pF
VCE = 2.5 V, IC = 25 mA
f = 1 GHz
VCB = 2 V, VBE = 0
f = 1 MHz
Emitter grounded
VCE = 2 V, VBE= 0
f = 1 MHz
Base grounded
VEB = 0.4 V,VCB = 0
f = 1 MHz
Collector grounded
Data Sheet
11
Revision 1.1, 2013-04-11
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