BFP842ESD Datasheet, PDF (7/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP842ESD
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Product Brief
Product Brief
The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5
GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon.
The BFP842ESD provides inherently good input power match as well as inherently good noise match between
2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the
input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the
application. Integrated protection elements at in- and output make the device robust against ESD and excessive
RF input power.
The device offers its high performance at low current and voltage and is especially well-suited for portable battery-
powered applications in which energy efficiency is a key requirement. The device comes in an easy to use industry
standard package with visible leads.
Data Sheet
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Revision 1.1, 2013-04-11