BFP842ESD Datasheet, PDF (20/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP842ESD
Electrical Characteristics
0.085
0.08
0.075
0.07
0.065
0.06
0.055
0
0.5
1
1.5
2
2.5
3
V [V]
CB
Figure 5-11 Collector Base Capacitance C_CB = f (V_CB), f = 1 MHz
36
33
30
G_ms
27
24
21
18
G_ma
15
12
|S₂₁|²
9
6
3
0
0
2
4
6
f [GHz]
Figure 5-12 Gain G_ma,G_ms, |S₂₁|² = f (f), V_CE = 2.5 V, I_C = 15 mA
8
10
Data Sheet
20
Revision 1.1, 2013-04-11