BFP842ESD Datasheet, PDF (23/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP842ESD
Electrical Characteristics
0
−5
−10
15mA
−15
5mA
−20
−25
0 1 2 3 4 5 6 7 8 9 10
f [GHz]
Figure 5-17 Input Reflection Coefficient S₁₁ = f (f), V_CE = 2.5 V, I_C = 5 / 15 mA
0.5
0.4
0.3
10.0
0.2
9.0
0.1
0
0.1 0.2 ⁸0^.0.3 0.4 0.5
−0.1
−0.2
−0.3
7.0
6.0
5.0
−0.4
−0.5
1
1.5
2
0.03 to 10 GHz
1 1.5 2 3 4 5
3
4
5
10
00..0033
−10
1.0
4.0
3.0
2.0
−5
1.0
−4
−3
−2
−1.5
−1
5 mA
15 mA
Figure 5-18 Output Reflection Coefficient S₂₂ = f (f), V_CE = 2.5 V, I_C = 5 / 15 mA
Data Sheet
23
Revision 1.1, 2013-04-11