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BFP842ESD Datasheet, PDF (17/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor
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BFP842ESD
Electrical Characteristics
10−4
10−5
10−6
10−7
10−8
10−9
0.5
0.6
0.7
0.8
V [V]
EB
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2.5 V
Data Sheet
17
Revision 1.1, 2013-04-11
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