BFP842ESD Datasheet, PDF (24/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP842ESD
Electrical Characteristics
1.4
1.2
15mA
10mA
1
5mA
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
f [GHz]
Figure 5-19 Noise Figure NF_min = f (f), V_CE = 2.5 V, I_C = 5 / 10 / 15 mA, Z_S = Z_opt
1.4
1.2
5.5GHz
1
3.5GHz
2.4GHz
0.8
0.9GHz
0.6
0.4
0.2
0
0 2 4 6 8 10 12 14 16 18 20 22 24
I [mA]
C
Figure 5-20 Noise Figure NF_min = f (I_C), V_CE = 2.5 V, Z_S = Z_opt, f = Parameter in GHz
Data Sheet
24
Revision 1.1, 2013-04-11