BFP842ESD Datasheet, PDF (8/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

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Features
BFP842ESD
Features
• Robust very low noise amplifier based on Infineon´s reliable, high
volume SiGe:C technology
• Unique combination of high-end RF performance and robustness:
16 dBm maximum RF input power, 1 kV HBM ESD hardness
• High linearity OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA
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• High transition frequency f_T = 60 GHz enables very low noise
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figure at high frequencies: NF_min = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA
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1
• Transducer gain |S₂₁|² = 16 dB @ 3.5 GHz, 2.5 V, 15 mA
• Ideal for low voltage applications e.g. V_CC = 1.8 V and 2.85 V
(3.3 V, 3.6 V requires corresponding collector resistor)
SOT343
• Low power consumption, ideal for mobile applications
• Easy to use Pb free (RoHS compliant) and halogen free industry
standard package with visible leads
• Qualification report according to AEC-Q101 available
Applications
As very low noise amplifier (LNA) in
• Mobile and fixed connectivity applications: WLAN 802.11b/g/n, WiMAX 2.5/3.5 GHz, Bluetooth
• Satellite communication systems: GNSS Navigation systems (GPS, GLONASS, COMPASS/Beidu/Galileo)
Satellite radio (SDARs, DAB and C-band LNB)
and C-band LNB (1st and 2nd stage LNA)
• Multimedia applications such as mobile/portable TV, Mobile TV, FM Radio
• 3G/4G UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee
As discrete active mixer, buffer amplifier in VCOs
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BFP842ESD
Package
SOT343
1=B
Pin Configuration
2=E
3=C
4=E
Marking
T9s
Data Sheet
8
Revision 1.1, 2013-04-11