BFP842ESD Datasheet, PDF (19/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP842ESD
Electrical Characteristics
30
11 _{12 13}
14 _{15 16 17 1812292102}
25
20
10 11 ^{12 13}
14 15 _{16 17} 181290
2212
2234
25
26
23
15
11 ^{12 13}
14 15 16 17 ^18122901
24
25
26
10 ^{14 15}
25
22
23
24
1
1.5
2
2.5
3
V [V]
CE
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (I_C, V_CE), Z_S = Z_L = 50 Ω, f = 3.5 GHz
30
−4 _{−3 −2}
0 1 ₂₃
4
567
8
25
−1
9
4 ⁵⁶
7
20
8
15
0
10
2
1
5 ^−01
1
9
45
8
7
5
3
4
2
−101
6
5
4
3
2
10
6
5
4
3
1.5
2
2.5
3
V_CE [V]
Figure 5-10 Compression Point at output OP_1dB [dBm] = f (I_C, V_CE), Z_S = Z_L = 50 Ω, f = 3.5 GHz
Data Sheet
19
Revision 1.1, 2013-04-11