BFP842ESD Datasheet, PDF (15/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

5.4
Characteristic DC Diagrams
BFP842ESD
Electrical Characteristics
20
75µA
18
65µA
16
55µA
14
12
45µA
10
35µA
8
25µA
6
15µA
4
2
5µA
0
0
0.5
1
1.5
2
2.5
3
3.5
V_CE [V]
Figure 5-2 Collector Current vs. Collector Emitter Voltage I_C = f (V_CE), I_B = Parameter
10³
10²
10^−2
10^−1
10⁰
10¹
I_C [mA]
Figure 5-3 DC Current Gain h_FE = f (I_C), V_CE = 2.5 V
Data Sheet
15
10²
Revision 1.1, 2013-04-11