BFP842ESD Datasheet, PDF (13/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP842ESD
Electrical Characteristics
Table 5-4 AC Characteristics, V_CE = 2.5 V, f = 0.9 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ms
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
29
–
26
–
0.45 –
24
–
7
–
22.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 15 mA
I_C = 15 mA
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Table 5-5 AC Characteristics, V_CE = 2.5 V, f = 1.5 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ms
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
25.5 –
23
–
0.45 –
21
–
7.5 –
23.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 15 mA
I_C = 15 mA
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Table 5-6 AC Characteristics, V_CE = 2.5 V, f = 1.9 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ms
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
23.5 –
21
–
0.5 –
19.5 –
8
–
24.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 15 mA
I_C = 15 mA
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Data Sheet
13
Revision 1.1, 2013-04-11