BFP842ESD Datasheet, PDF(6/28 Page) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

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BFP842ESD Datasheet, PDF (6/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

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BFP842ESD

List of Tables

Table 3-1

Table 4-1

Table 5-1

Table 5-2

Table 5-3

Table 5-4

Table 5-5

Table 5-6

Table 5-7

Table 5-8

Table 5-9

Maximum Ratings at TA = 25 Â°C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

DC Characteristics at TA = 25 Â°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

General AC Characteristics at TA = 25 Â°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

AC Characteristics, VCE = 2.5 V, f = 0.45 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

AC Characteristics, VCE = 2.5 V, f = 0.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

AC Characteristics, VCE = 2.5 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

AC Characteristics, VCE = 2.5 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

AC Characteristics, VCE = 2.5 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

AC Characteristics, VCE = 2.5 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

AC Characteristics, VCE = 2.5 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Data Sheet

Revision 1.1, 2013-04-11

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