BFP842ESD Datasheet, PDF (14/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP842ESD
Electrical Characteristics
Table 5-7 AC Characteristics, V_CE = 2.5 V, f = 2.4 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ms
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
22
–
19
–
0.5 –
18
–
8
–
25
–
Unit Note / Test Condition
dB
dB
dBm
I_C = 15 mA
I_C = 15 mA
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Table 5-8 AC Characteristics, V_CE = 2.5 V, f = 3.5 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ma
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
17.5 –
16
–
0.65 –
15
–
8.5 –
25.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 15 mA
I_C = 15 mA
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Table 5-9 AC Characteristics, V_CE = 2.5 V, f = 5.5 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ma
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
12.5 –
11.5 –
0.85 –
10.5 –
8
–
24
–
Unit Note / Test Condition
dB
dB
dBm
I_C = 15 mA
I_C = 15 mA
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
14
Revision 1.1, 2013-04-11