BFP842ESD Datasheet, PDF (22/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP842ESD
Electrical Characteristics
0.5
0.4
0.3
1
1.5
2
0.2
0.1
0
0.1
−0.1
−0.2
0.03 to 10 GHz
10.0
10.0
0.2 0.3 0.4 0.5
9.0 1 7.0 1.5 2
5.0
5.0 7.0
9.0
4.0
4.0
3.0
2.0
1.0
3.0
3 45
−0.3
2.0
1.0
−0.4
−0.5
−2
−1.5
−1
3
4
5
10
0.03
−10
−5
−4
−3
5 mA
15 mA
Figure 5-15 Input Reflection Coefficient S₁₁ = f (f), V_CE = 2.5 V, I_C = 5 / 15 mA
0.5
0.4
0.3
1
1.5
2
0.2
0.1
0
0.1 0.2 0.3 0.4 0.5
−0.1
3.5
4.0
5.0
2.4
1.9
5.5
3.5 2.4
1.5
6.0
1 1.5_0.9 2
5.5
0.9
0₃.9
0.5
45
5.5
3
4
5
10
−10
−0.2
−0.3
−0.4
−0.5
−5
−4
−3
−2
−1.5
−1
5 mA
10 mA
15 mA
Figure 5-16 Source Impedance for Minimum Noise Figure Z_opt = f (f), V_CE = 2.5 V, I_C = 5 / 10 / 15 mA
Data Sheet
22
Revision 1.1, 2013-04-11