BFP842ESD Datasheet, PDF (21/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP842ESD
Electrical Characteristics
36
33
0.45GHz
30
0.90GHz
27
24
1.50GHz
21
1.90GHz
2.40GHz
18
15
3.50GHz
12
5.50GHz
9
6
3
0
10
20
30
40
50
I [mA]
C
Figure 5-13 Maximum Power Gain G_max = f (I_C), V_CE = 2.5 V, f = Parameter in GHz
36
33
0.45GHz
30
0.90GHz
27
1.50GHz
24
1.90GHz
2.40GHz
21
18
3.50GHz
15
12
5.50GHz
9
6
3
0.5
1
1.5
2
2.5
3
3.5
V [V]
CE
Figure 5-14 Maximum Power Gain G_max = f (V_CE), I_C = 15 mA, f = Parameter in GHz
Data Sheet
21
Revision 1.1, 2013-04-11