IC42S8200 Datasheet, PDF (5/76 Pages) Integrated Circuit Solution Inc – 1Meg x 8 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

1+" 5& 
DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
Speed Min. Max. Unit
IIL
Input Leakage Current
0V < VIN < VCC, with pins other than
the tested pin at 0V
IOL
Output Leakage Current
Output is disabled
0V < VOUT < VCC
VOH
Output High Voltage Level IOUT = –2 mA
VOL
Output Low Voltage Level IOUT = +2 mA
–5
5
µA
–10 10 µA
2.4 —
V
— 0.4
V
ICC1
Operating Current^(1,2)
One Bank Operation, CAS latency = 3
Burst Length=1
tRC > tRC (min.)
IOUT = 0mA
ICC2
Precharge Standby Current CKE < VIL (MAX)
(In Power-Down Mode)
tCK = tCK (MIN)
ICC3 Active Standby Current
CKE > VIH (MIN)
(In Non Power-Down Mode)
tCK = tCK (MIN)
ICC4
Operating Current
(In Burst Mode)⁽¹⁾
tCK = tCK (MIN)
IOUT = 0mA
ICC5
Auto-Refresh Current
tRC = tRC (MIN)
ICC6
Self-Refresh Current
CKE < 0.2V
-6
— 145 mA
-7
— 140 mA
-8
— 135 mA
——
2
mA
— —6 45 mA
— —7 40 mA
— —8 35 mA
-6
— 140 mA
-7
— 130 mA
-8
— 100 mA
-6
—
90 mA
-7
—
80 mA
-8
—
70 mA
——
1
mA
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 µ. should be inserted between Vcc and GND for each
memory chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc1 and Icc4 depend on the output load.
Integrated Circuit Solution Inc.
5
DR018-0A 07/10/2001