HY5DU283222AQ Datasheet, PDF (49/51 Pages) Hynix Semiconductor – 128M(4Mx32) GDDR SDRAM

Write With Auto Precharge
/CK
CK
CKE
tIH
tIS
tCK
tCH tCL
CMD
NOP
RA, CA
WRITE
tIS tIH
Col n
NOP
NOP
NOP
RA
AP
BA0,BA1
Case 1 :
tDQSS = min
DQS
DQ
DM
EN AP
tIS tIH
Bank x
tDQSS
tDQSH
tDSH
tWPST
tWPRES
tWPRE
DI
n
tDQSL
HY5DU283222AQ
VALID
NOP
VALID
NOP
VALID
NOP
NOP
tDAL
ACT
RA
RA
RA
BA
Case 2 :
tDQSS = max
DQS
DQ
DM
tDQSS
tDSS
tDQSH
tWPRES
tWPRE
DI
n
tDQSL
tDSS
tWPST
DI n = Data in for column n
Burst length = 4 in the case shown
3 subsequent elements of Data In are applied in the programmed order following Data In
EN AP = Enable Autoprecharge
* = * “ Don’t Care”, if AP is high at this point
ACT=Active, RA=Row Address, BA=Bank Address
NOP commands are shown for ease of illustration; other valid commands may be possible at these times
Don’t care
Rev. 0.2 / Sep. 2003
49