MB82DBS04163C Datasheet, PDF (50/62 Pages) Fujitsu Component Limited. – MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word×16 bit) Mobile Phone Application Specific Memory

MB82DBS04163C-70L
(26) Synchronous Write Timing 4 (WE Level Control, Single Write)
RL = 5
CLK
Address
Address
Valid
tASVL
tVSCK
tVSCK
tAHV
tCKVH
ADV
tVPL
tASCL
CE1
tCLCK
tWCB
tASVL
Address
Valid
tVSCK
t_tAAHHVV
tCKVH
tWRB
tASCL
tVPL
tCLCK
tCP
OE
High
tWLD
tCKWH
WE
tBS
LB, UB
tCKBH
tBS
WAIT
High-Z
DQ
tWLTH
tDSCK
tWHTZ
D1
tDHCK
tWLTH
Notes : • This timing diagram assumes CE2 = H, the valid clock edge on rising edge and single write operation.
• Write data is latched on the valid clock edge.
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