MB82DBS04163C Datasheet, PDF (22/62 Pages) Fujitsu Component Limited. – MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word×16 bit) Mobile Phone Application Specific Memory

MB82DBS04163C-70L
(5) Synchronous Read Operation (Burst mode)
(At recommended operating conditions unless otherwise noted)
Parameter
Symbol
Value
Min
Max
Unit Notes
Burst Read Cycle Time
tRCB
⎯
4000
ns
Access Time from CLK
RL = 6, 5
RL = 4, 3
tAC
⎯
tAC
⎯
10
ns *1
12
ns *1
Output Hold Time from CLK
tCKQX
3
⎯
ns *1
CE1 Low to WAIT Low
tCLTL
5
20
ns *1
OE Low to WAIT Low
tOLTL
0
20
ns *1, *2
ADV Low to WAIT Low
tVLTL
0
20
ns *1
CLK to WAIT Valid Time
tCKTV
⎯
10
ns *1, *3
WAIT Valid Hold Time from CLK
tCKTX
3
⎯
ns *1
CE1 Low to Output Low-Z
tCLZ
5
⎯
ns *4
OE Low to Output Low-Z
tOLZ
10
⎯
ns *4
LB, UB Low to Output Low-Z
tBLZ
0
⎯
ns *4
CE1 High to Output High-Z
tCHZ
⎯
20
ns *1
OE High to Output High-Z
tOHZ
⎯
14
ns *1
LB, UB High to Output High-Z
tBHZ
⎯
20
ns *1
CE1 High to WAIT High-Z
tCHTZ
⎯
20
ns *1
OE High to WAIT High-Z
tOHTZ
⎯
20
ns *1
OE Low Setup Time to 1st Data-output
tOLQ
30
⎯
ns
LB, UB Setup Time to 1st Data-output
tBLQ
26
⎯
ns *5
OE Setup Time to CLK
tOSCK
4
⎯
ns
OE Hold Time from CLK
tCKOH
2
⎯
ns
Burst End CE1 Low Hold Time from CLK
tCKCLH
2
⎯
ns
Burst End LB, UB Hold Time from CLK
tCKBH
2
⎯
ns
Burst Terminate
Recovery Time
BL = 8, 16
26
tTRB
BL = Continuous
70
⎯
ns *6
⎯
ns *6
*1 : The output load 50 pF with 50 Ω termination to VDD × 0.5 V.
*2 : WAIT drives High at the beginning depending on OE falling edge timing.
*3 : tCKTV is guaranteed after tOLTL (Max) from OE falling edge and tOSCK must be satisfied.
*4 : The output load 5 pF without any other load.
*5 : Once they are determined, they must not be changed until the end of burst read.
*6 : Defined from the Low to High transition of CE1 to the High to Low transition of either ADV or CE1 whichever
occurs late.
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