MB82DBS04163C Datasheet, PDF (5/62 Pages) Fujitsu Component Limited. – MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word×16 bit) Mobile Phone Application Specific Memory

MB82DBS04163C-70L
■ STATE DIAGRAM
• Initial/Standby State
Power
Up
Pause Time
Power
Down ^{CE2 = H}
CE2 = L _Standby
CR Set
@M = 1 @M = 0
CE2 = H
@RP = 0
Asynchronous Operation
(Page Mode)
Synchronous Operation
(Burst Mode)
Common State
CE2 = H
@RP = 1
Power
Down
Standby ^{CE2 = L}
• Asynchronous Operation
CE2 = CE1 = H
Standby
Byte
Control
CE1 = L &
WE = L
CE1 = L
CE1 = H
CE1 = L &
OE = L
CE1 = H
Output
Disable
CE1 = H
WE = H
WE = L
OE = H
OE = L
Write
Byte Control @OE = L
Read
Address Change
or Byte Control
• Synchronous Operation
CE1 = H
CE2 = CE1 = H
Standby
CE1 = H
Write
Suspend
WE = L
CE1 = H
WE = H
CE1 = L,
ADV Low Pulse,
& WE = L
CE1 = H
CE1 = L,
ADV Low Pulse,
& OE = L
OE = H
Read
Suspend
OE = L
ADV Low Pulse
Write
ADV Low Pulse
(@BL = 8 or 16, and after burst
operation is completed)
Read
ADV Low Pulse
Note : Assuming all the parameters specified in AC CHARACTERISTICS are satisfied. Refer to the "■FUNCTIONAL
DESCRIPTION", "2. AC Characteristics" in "■ELECTRICAL CHARACTERISTICS", and "■TIMING DIA-
GRAMS" for details.
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