MB82DBS04163C Datasheet, PDF (1/62 Pages) Fujitsu Component Limited. – MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word×16 bit) Mobile Phone Application Specific Memory

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-11432-1E
MEMORY Mobile FCRAM^TM
CMOS
64 M Bit (4 M word×16 bit)
Mobile Phone Application Specific Memory
MB82DBS04163C-70L
■ DESCRIPTION
The FUJITSU MB82DBS04163C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous
Static Random Access Memory (SRAM) interface containing 67,108,864 storages accessible in a 16-bit format.
MB82DBS04163C is utilized using a FUJITSU advanced FCRAM core technology and improved integration in
comparison to regular SRAM.
The MB82DBS04163C adopts asynchronous page mode and synchronous burst mode for fast memory access
as user configurable options.
This MB82DBS04163C is suited for mobile applications such as Cellular Handset and PDA.
* : FCRAM is a trademark of FUJITSU LIMITED, Japan
■ PRODUCT LINEUP
Parameter
Access Time (Max) (tCE, tAA)
Access Time from CLK (Max) (tAC)
Active Current (Max) (IDDA1)
Standby Current (Max) (IDDS1)
Power Down Current (Max) (IDDPS)
RL = 6, 5
TA ≤ + 40 °C
MB82DBS04163C-70L
70 ns
10 ns
35 mA
90 µA
10 µA
■ FEATURES
• Asynchronous SRAM Interface
• Fast Access Time : tCE = 70 ns Max
• 8 words Page Access Capability : tPAA = 20 ns Max
• Burst Read/Write Access Capability : tAC = 10 ns Max
• Low Voltage Operating Condition : VDD = 1.7 V to 1.95 V
• Wide Operating Temperature : TA = -30 °C to +85 °C
• Byte Control by LB and UB
• Low-Power Consumption : IDDA1 = 35 mA Max
IDDS1 = 90 µA Max (TA ≤ + 40°C )
• Various Power Down mode : Sleep
8 M-bit Partial
16 M-bit Partial
• Shipping Form : Wafer/Chip