MB82DBS04163C Datasheet, PDF (15/62 Pages) Fujitsu Component Limited. – MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word×16 bit) Mobile Phone Application Specific Memory

MB82DBS04163C-70L
• Burst Read Termination
Burst read operation can be terminated by CE1 brought to High. If BL is set on Continuous, burst read operation
is continued endless unless terminated by CE1 = H. It is inhibited to terminate burst read before first data output
is completed. In order to guarantee last data output, the specified minimum value of CE1 = L hold time from
clock edge must be satisfied. After termination, the specified minimum recovery time (tTRB) is required to start
new access.
CLK
Address
ADV
CE1
OE
WAIT
DQ
tCKCLH
tCKOH
tCHZ
tOHZ
tTRB
tAC
Q1
tCHTZ
tCKQX
Q2
High-Z
Valid address
• Burst Write Termination
Burst write operation can be terminated by CE1 brought to High. If BL is set on Continuous, burst write operation
is continued endless unless terminated by CE1 = H. It is inhibited to terminate burst write before first data input
is completed. In order to guarantee last data input being latched, the specified minimum values of CE1 = L hold
time from clock edge must be satisfied. After termination, the specified minimum recovery time (tTRB) is required
to start new access.
CLK
Address
ADV
CE1
WE
WAIT
DQ
tCKCLH
tCKWH
tCHCK
tDSCK tDSCK
tCHTZ
D1
D2
tDHCK tDHCK
tTRB
High-Z
Valid address
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