MB82DBS04163C Datasheet, PDF (24/62 Pages) Fujitsu Component Limited. – MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word×16 bit) Mobile Phone Application Specific Memory

MB82DBS04163C-70L
(7) Power Down Parameters
Parameter
(At recommended operating conditions unless otherwise noted)
Symbol
Value
Min
Max
Unit Notes
CE2 Low Setup Time for Power Down Entry
tCSP
10
⎯
ns
CE2 Low Hold Time after Power Down Entry
tC2LP
70
⎯
ns
CE2 Low Hold Time for Reset to Asynchronous mode
tC2LPR
50
⎯
µs *1
CE1 High Hold Time following CE2 High
after Power Down Exit [SLEEP mode only]
tCHH
300
⎯
µs *2
CE1 High Hold Time following CE2 High
after Power Down Exit [not in SLEEP mode]
tCHHP
70
⎯
ns *3
CE1 High Setup Time following CE2 High
after Power Down Exit
tCHS
0
⎯
ns *2
*1 : Applicable when CR is set to RP=0 (Reset to Page mode)
*2 : Applicable also to power-up.
*3 : Applicable when 8 M-bit or 16 M-bit Partial mode is set.
(8) Other Timing Parameters
Parameter
(At recommended operating conditions unless otherwise noted)
Symbol
Value
Min
Max
Unit Notes
CE1 High to OE Invalid Time for Standby Entry
tCHOX
10
⎯
ns
CE1 High to WE Invalid Time for Standby Entry
tCHWX
10
⎯
ns *1
CE2 Low Hold Time after Power-up
tC2LH
50
⎯
µs
CE1 High Hold Time following CE2 High after Power-up tCHH
300
⎯
µs
Input Transition Time (except for CLK)
tT
1
25
ns *2, *3
*1 : Some data might be written into any address location if tCHWX (Min) is not satisfied.
*2 : Except for clock input transition time.
*3 : The Input Transition Time (tT) at AC testing is 5 ns for Asynchronous operation and 3 ns for Synchronous
operation respectively. If actual tT is longer than 5 ns or 3 ns specified as AC test condition, it may violate AC
specification of some timing parameters. See " (9) AC Test Conditions".
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