MB82DBS04163C Datasheet, PDF (13/62 Pages) Fujitsu Component Limited. – MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word×16 bit) Mobile Phone Application Specific Memory

MB82DBS04163C-70L
• Write control
The device has two types of WE signal control method, "WE Level Control" and "WE Single Clock Pulse Control",
for synchronous burst write operation. It is configured through CR set sequence.
CLK
Address
ADV
CE1
WE Level Control
WE
0
1
2
3
4
5
6
Valid address
RL = 5
tWLD
DQ [Input]
WAIT
High-Z
tWLTH
WE Single Clock Pulse Control
tWSCK
WE
DQ [Input]
WAIT
tCKWH
High-Z
tCLTH
tWLTH
D1
D2
D3
D4
D1
D2
D3
D4
13