MB82DBS04163C Datasheet, PDF (19/62 Pages) Fujitsu Component Limited. – MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word×16 bit) Mobile Phone Application Specific Memory

MB82DBS04163C-70L
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*7 : In case Page Read Cycle is continued with keeping CE1 stays Low, CE1 must be brought to High within 4 µs.
In other words, Page Read Cycle must be closed within 4 µs.
*8 : tVPL is specified from the falling edge of either CE1 or ADV whichever comes late. The sum of tVPL and tVPH must
be equal or greater than tRC for each access.
*9 : Applicable to address access when at least two of address inputs are switched from previous state.
*10 : tRC (Min) and tPRC (Min) must be satisfied.
*11 : If actual value of tWHOL is shorter than specified minimum values, the actual tAA of following Read may become
longer by the amount of subtracting actual value from specified minimum value.
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