MB82DBS04163C Datasheet, PDF (2/62 Pages) Fujitsu Component Limited. – MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word×16 bit) Mobile Phone Application Specific Memory

MB82DBS04163C-70L
■ PIN DESCRIPTION
Pin Name
Description
A21 to A0
CE1
Address Input
Chip Enable 1 (Low Active)
CE2
Chip Enable 2(High Active)
WE
Write Enable (Low Active)
OE
Output Enable (Low Active)
LB
Lower Byte Control (Low Active)
UB
Upper Byte Control (Low Active)
CLK
Clock Input
ADV
Address Valid Input (Low Active)
WAIT
Wait Output
DQ8 to DQ1
DQ16 to DQ9
VDD
VSS
Lower Byte Data Input/Output
Upper Byte Data Input/Output
Power Supply Voltage
Ground
Note : Refer to "■PACKAGE FOR ENGINEERING SAMPLES" for additional pin descriptions of FBGA package
supply.
■ BLOCK DIAGRAM
VDD
VSS
A21 to A3
A2 to A0
ADDRESS
LATCH &
BUFFER
Y CONTROLLER
CE2
CE1
ADV
WE
OE
LB
UB
MODE
CONTROLLER
COMMAND
DECODER
BURST
ADDRESS
COUNTER
ADDRESS
CONTROLLER
MEMORY
CORE
CONTROLLER
MEMORY
CELL
ARRAY
67,108,864 bits
READ
AMP
WRITE
AMP
CLK
WAIT
DQ16 to DQ9
DQ8 to DQ1
BURST
CONTROLLER
I/O
BUFFER
BUS
CONTROLLER
PARALLEL
SERIAL
TO SERIAL TO PARALLEL
CONVERSION CONVERSION
CONVERTER
2