MB82DBS04163C Datasheet, PDF (18/62 Pages) Fujitsu Component Limited. – MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word×16 bit) Mobile Phone Application Specific Memory

MB82DBS04163C-70L
2. AC Characteristics
(1) Asynchronous Read Operation (Page mode)
(At recommended operating conditions unless otherwise noted)
Parameter
Value
Symbol
Unit
Notes
Min
Max
Read Cycle Time
CE1 Access Time
OE Access Time
Address Access Time
ADV Access Time
LB, UB Access Time
Page Address Access Time
Page Read Cycle Time
Output Data Hold Time
CE1 Low to Output Low-Z
OE Low to Output Low-Z
LB, UB Low to Output Low-Z
CE1 High to Output High-Z
OE High to Output High-Z
LB, UB High to Output High-Z
Address Setup Time to CE1 Low
Address Setup Time to OE Low
ADV Low Pulse Width
ADV High Pulse Width
Address Setup Time to ADV High
Address Hold Time from ADV High
Address Invalid Time
Address Hold Time from CE1 High
Address Hold Time from OE High
WE High to OE Low Time for Read
CE1 High Pulse Width
tRC
70
tCE
⎯
tOE
⎯
tAA
⎯
tAV
⎯
tBA
⎯
tPAA
⎯
tPRC
20
tOH
5
tCLZ
5
tOLZ
10
tBLZ
0
tCHZ
⎯
tOHZ
⎯
tBHZ
⎯
tASC
−5
tASO
10
tVPL
10
tVPH
15
tASV
5
tAHV
5
tAX
⎯
tCHAH
−5
tOHAH
−5
tWHOL
25
tCP
15
1000
70
40
70
70
30
20
1000
⎯
⎯
⎯
⎯
20
14
20
⎯
⎯
⎯
⎯
⎯
⎯
10
⎯
⎯
1000
⎯
ns *1, *2
ns *3
ns *3
ns *3, *5
ns *3
ns *3
ns *3, *6
ns *1, *6, *7
ns *3
ns *4
ns *4
ns *4
ns *3
ns *3
ns *3
ns
ns
ns *8
ns *8
ns
ns
ns *5, *9
ns *10
ns
ns *11
ns
*1 : Maximum value is applicable if CE1 is kept at Low without change of address input of A21 to A3.
*2 : Address should not be changed within minimum tRC.
*3 : The output load 50 pF with 50 Ω termination to VDD × 0.5 V.
*4 : The output load 5 pF without any other load.
*5 : Applicable to A21 to A3 when CE1 is kept at Low.
*6 : Applicable only to A2, A1 and A0 when CE1 is kept at Low for the page address access.
(Continued)
18