MB82DBS04163C Datasheet, PDF (17/62 Pages) Fujitsu Component Limited. – MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word×16 bit) Mobile Phone Application Specific Memory

MB82DBS04163C-70L
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
Parameter
Input Leakage Current
Output Leakage Current
Symbol
(At recommended operating conditions unless otherwise noted)
Test Conditions
Value
Unit
Min Max
ILI
VSS ≤ VIN ≤ VDD
−1.0 +1.0 µA
ILO
0 V ≤ VOUT ≤ VDD,
Output High Impedance
−1.0 +1.0 µA
Output High Voltage Level
Output Low Voltage Level
VDD Power Down Current
VOH VDD = VDD (Min), IOH = −0.5 mA
1.4
VOL IOL = 1 mA
⎯
IDDPS
IDDP8
IDDP16
VDD = VDD (Max),
VIN = VIH or VIL,
CE2 ≤ 0.2 V
SLEEP
⎯
8 M-bit Partial ⎯
16 M-bit Partial ⎯
VDD = VDD (Max),
IDDS VIN (including CLK) = VIH or VIL,
⎯
CE1 = CE2 = VIH
⎯
V
0.4
V
10
µA
80
µA
100 µA
1.5 mA
VDD Standby Current
IDDS1
VDD = VDD (Max),
VIN (including CLK) ≤ 0.2 V or
VIN (including CLK) ≥ VDD −
0.2 V,
CE1 = CE2 ≥ VDD − 0.2 V
TA ≤ +85 °C
TA ≤ +40 °C
⎯
170 µA
⎯
90
µA
IDDS2
VDD = VDD (Max), tCK = Min
VIN ≤ 0.2 V or VIN ≥ VDD − 0.2 V,
CE1 = CE2 ≥ VDD − 0.2 V
⎯
220 µA
VDD Active Current
IDDA1 VDD = VDD (Max),
tRC/tWC = Min
⎯
VIN = VIH or VIL,
IDDA2 ^{CE1 = VIL and CE2 = VIH,}
tRC/tWC = 1 µs
⎯
IOUT = 0 mA
35 mA
5
mA
VDD Page Read Current
IDDA3
VDD = VDD (Max), VIN = VIH or VIL,
CE1 = VIL and CE2 = VIH,
IOUT = 0 mA, tPRC = Min
⎯
10 mA
VDD Burst Access Current
IDDA4
VDD = VDD (Max), VIN = VIH or VIL,
CE1 = VIL and CE2 = VIH,
tCK = tCK (Min), BL = Continuous,
IOUT = 0 mA
⎯
25 mA
Notes : • All voltages are referenced to VSS = 0 V.
• DC characteristics are measured after following Power-up Timing.
• IOUT depends on the output load conditions.
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