MB82DBS02163C Datasheet, PDF (18/63 Pages) Fujitsu Component Limited. – 32 M Bit (2 M word×16 bit) Mobile Phone Application Specific Memory

MB82DBS02163C-70L
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
VDD Power Down Current
VDD Standby Current
VDD Active Current
VDD Page Read Current
VDD Burst Access Current
Symbol
(At recommended operating conditions unless otherwise noted)
Test Conditions
Value
Unit
Min Max
ILI
VSS ≤ VIN ≤ VDD
−1.0 +1.0 µA
ILO 0 V ≤ VOUT ≤ VDD, Output Disable
−1.0 +1.0 µA
VOH VDD = VDD (Min), IOH = −0.5 mA
1.4
⎯
V
VOL IOL = 1 mA
⎯
0.4
V
IDDPS
IDDP4
IDDP8
VDD = VDD (Max),
VIN = VIH or VIL,
CE2 ≤ 0.2 V
SLEEP
4 M-bit Partial
8 M-bit Partial
⎯
10
µA
⎯
40
µA
⎯
50
µA
VDD = VDD (Max),
IDDS VIN (including CLK) = VIH or VIL,
CE1 = CE2 = VIH
⎯
1.5 mA
IDDS1
VDD = VDD (Max),
VIN (including CLK) ≤ 0.2 V or
VIN (including CLK) ≥ VDD − 0.2 V,
CE1 = CE2 ≥ VDD − 0.2 V
⎯
80
µA
IDDS2
VDD = VDD (Max), tCK = Min
VIN ≤ 0.2 V or VIN ≥ VDD − 0.2 V,
CE1 = CE2 ≥ VDD − 0.2 V
⎯
200 µA
IDDA1
IDDA2
VDD = VDD (Max),
VIN = VIH or VIL,
CE1 = VIL and CE2 = VIH,
IOUT = 0 mA
tRC/tWC = Min
tRC/tWC = 1 µs
⎯
30 mA
⎯
3
mA
IDDA3
VDD = VDD (Max), VIN = VIH or VIL,
CE1 = VIL and CE2 = VIH,
IOUT = 0 mA, tPRC = Min
⎯
10 mA
IDDA4
VDD = VDD (Max), VIN = VIH or VIL,
CE1 = VIL and CE2 = VIH,
tCK = tCK (Min), BL = Continuous,
IOUT = 0 mA
⎯
15 mA
Notes : • All voltages are referenced to VSS = 0 V.
• IDD depends on the output termination, load conditions, and AC characteristics.
• After power on, initialization following POWER-UP timing is required. DC characteristics are guaranteed
after the initialization.
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