MB82DBS02163C Datasheet, PDF (1/63 Pages) Fujitsu Component Limited. – 32 M Bit (2 M word×16 bit) Mobile Phone Application Specific Memory

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-11429-3E
MEMORY Mobile FCRAM^TM
CMOS
32 M Bit (2 M word×16 bit)
Mobile Phone Application Specific Memory
MB82DBS02163C-70L
■ DESCRIPTION
The FUJITSU MB82DBS02163C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous
Static Random Access Memory (SRAM) interface containing 33,554,432 storages accessible in a 16-bit format.
MB82DBS02163C is utilized using a FUJITSU advanced FCRAM core technology and improved integration in
comparison to regular SRAM. The MB82DBS02163C adopts asynchronous page mode and synchronous burst
mode for fast memory access as user configurable options.
This MB82DBS02163C is suited for mobile applications such as Cellular Handset and PDA.
*: FCRAM is a trademark of Fujitsu Limited, Japan
■ FEATURES
• Asynchronous SRAM Interface
• Fast Access Time : tCE = 70 ns Max
• 8 words Page Access Capability : tPAA = 20 ns Max
• Burst Read/Write Access Capability : tAC = 12 ns Max
• Low Voltage Operating Condition : VDD = +1.65 V to +1.95 V
• Wide Operating Temperature : TA = -30 °C to +85 °C
• Byte Control by LB and UB
• Low-Power Consumption : IDDA1 = 30 mA Max
IDDS1 = 80 µA Max
• Various Power Down mode : Sleep
4 M-bit Partial
8 M-bit Partial
• Shipping Form : Wafer/Chip, 71-ball plastic FBGA package
Copyright© 2005-2006 FUJITSU LIMITED All rights reserved