MC9S08QE16CLC Datasheet, PDF (55/350 Pages) Freescale Semiconductor, Inc – Low-power wireless applications, Gas, water and heater meters

Chapter 4 Memory
a burst program command is issued, the charge pump is enabled and then remains enabled after completion
of the burst program operation if the following two conditions are met:
1. The next burst program command has been queued before the current program operation has
completed.
2. The next sequential address selects a byte on the same physical row as the current byte being
programmed. A row of FLASH memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
program time provided that the conditions above are met. In the case the next sequential address is the
beginning of a new row, the program time for that byte will be the standard time instead of the burst time.
This is because the high voltage to the array must be disabled and then enabled again. If a new burst
command has not been queued before the current command completes, then the charge pump will be
disabled and high voltage removed from the array.
MC9S08AC60 Series Data Sheet, Rev. 3
Freescale Semiconductor
55