MC9S08QE16CLC Datasheet, PDF (54/350 Pages) Freescale Semiconductor, Inc – Low-power wireless applications, Gas, water and heater meters

Chapter 4 Memory
START
Read: FCDIV register
Clock Register
Written
Check
FDIVLD
Set?
yes
no
Write: FCDIV register
NOTE: FCDIV needs to
be set after each reset
Read: FSTAT register
Command
Buffer Empty Check
FCBEF
no
Set?
yes
Access Error and
Protection Violation
Check
FACCERR/FPVIOL ^yes
Set?
no
1.
Write: Flash Block Address
and Dummy Data
2.
Write: FCMD register
Erase Verify Command 0x05
3.
Write: FSTAT register
Clear FCBEF 0x80
Read: FSTAT register
Write: FSTAT register
Clear FACCERR/FPVIOL 0x30
Bit Polling for
Command Completion
Check
FCCF
no
Set?
yes
Erase Verify
Status
FBLANK
no
Set?
yes
EXIT
Flash Block
Erased
EXIT
Flash Block
Not Erased
Figure 4-3. Example Erase Verify Command Flow
4.4.4 Burst Program Execution
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the FLASH
array does not need to be disabled between program operations. Ordinarily, when a program or erase
command is issued, an internal charge pump associated with the FLASH memory must be enabled to
supply high voltage to the array. Upon completion of the command, the charge pump is turned off. When
MC9S08AC60 Series Data Sheet, Rev. 3
54
Freescale Semiconductor