MC9S08AC16_08 Datasheet, PDF (326/344 Pages) Freescale Semiconductor, Inc – 8-Bit HCS08 Central Processor Unit (CPU)

Appendix A Electrical Characteristics and Timing Specifications
A.12 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations, see Chapter 4, “Memory.”
Table A-15. FLASH Characteristics
Num C
Characteristic
Symbol
Min
Typ¹
Max
Unit
1
Supply voltage for program/erase
V_prog/erase
2.7
5.5
V
2
Supply voltage for read operation
V_Read
2.7
5.5
V
3
Internal FCLK frequency²
f_FCLK
150
200
kHz
4
Internal FCLK period (1/FCLK)
t_Fcyc
5
6.67
μs
5
Byte program time (random location)⁽²⁾
t_prog
9
t_Fcyc
6
Byte program time (burst mode)⁽²⁾
t_Burst
4
t_Fcyc
7
Page erase time³
t_Page
4000
t_Fcyc
8
Mass erase time⁽²⁾
t_Mass
20,000
t_Fcyc
Program/erase endurance⁴
9
C
T_L to T_H = –40°C to + 125°C
T = 25°C
10,000
—
—
cycles
—
100,000 —
10
Data retention⁵
t_{D_ret}
15
100
—
years
1 _{Typical values are based on characterization data at VDD = 5.0 V, 25°C unless otherwise stated.}
2 _{The frequency of this clock is controlled by a software setting.}
3 _{These values are hardware state machine controlled. User code does not need to count cycles. This information}
supplied for calculating approximate time to program and erase.
4 _{Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information}
on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619, Typical
Endurance for Nonvolatile Memory.
5 _{Typical data retention values are based on intrinsic capability of the technology measured at high temperature and}
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
A.13 EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
MC9S08AC16 Series Data Sheet, Rev. 6
326
Freescale Semiconductor