MC9S08SG8 Datasheet, PDF (296/310 Pages) Freescale Semiconductor, Inc – Microcontrollers

Appendix A Electrical Characteristics
A.13 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations, see the Memory section.
Table A-15. FLASH Characteristics
Num C
Characteristic
Symbol
Min
Typical
Max
Unit
1
P Supply voltage for program/erase
V_prog/erase
2.7
5.5
V
2
P Supply voltage for read operation
3
D Internal FCLK frequency¹
V_Read
2.7
f_FCLK
150
5.5
V
200
kHz
4
D Internal FCLK period (1/FCLK)
t_Fcyc
5
P Byte program time (random location)²
t_prog
6
P Byte program time (burst mode)²
t_Burst
7
P Page erase time²
t_Page
8
P Mass erase time²
t_Mass
Program/erase endurance³
9
C
T_L to T_H = –40°C to + 125°C
T = 25°C
n_FLPE
5
10,000
9
4
4000
20,000
—
100,000
6.67
—
—
µs
t_Fcyc
t_Fcyc
t_Fcyc
t_Fcyc
cycles
10
C Data retention⁴
t_{D_ret}
15
100
—
years
1 _{The frequency of this clock is controlled by a software setting.}
2 _{These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for}
calculating approximate time to program and erase.
3 _{Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information on how}
Freescale defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
4 _{Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated}
to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
MC9S08SG8 MCU Series Data Sheet, Rev. 0
296
PRELIMINARY
Freescale Semiconductor