MC9S08SG8 Datasheet, PDF (279/310 Pages) Freescale Semiconductor, Inc – Microcontrollers

Appendix A Electrical Characteristics
Table A-6. DC Characteristics (continued)
Num C
Characteristic
Symbol
15 C POR re-arm time⁸
t_POR
16 P Low-voltage detection threshold —
high range
V_DD falling
V_DD rising
V_LVD1
17 P Low-voltage detection threshold —
low range
V_DD falling
V_DD rising
V_LVD0
18 P Low-voltage warning threshold —
high range 1
V_DD falling
V_DD rising
V_LVW3
19 P Low-voltage warning threshold —
high range 0
V_DD falling
V_DD rising
V_LVW2
20 P Low-voltage warning threshold
low range 1
V_DD falling
V_DD rising
V_LVW1
21 P Low-voltage warning threshold —
low range 0
V_DD falling
V_DD rising
V_LVW0
22 T Low-voltage inhibit reset/recover
V_hys
hysteresis
23 P ^{Bandgap Voltage Reference9}
V_BG
Condition
5V
3V
Min
Typ¹
Max Unit
10
—
—
µs
3.9
4.0
4.1
V
4.0
4.1
4.2
2.48
2.56
2.64
V
2.54
2.62
2.70
4.5
4.6
4.7
V
4.6
4.7
4.8
4.2
4.3
4.4
V
4.3
4.4
4.5
2.84
2.92
3.00
V
2.90
2.98
3.06
2.66
2.74
2.82
V
2.72
2.80
2.88
—
100
—
mV
—
60
—
1.19
1.20
1.21
V
1 _{Typical values are measured at 25°C. Characterized, not tested}
2 _{This parameter is characterized and not tested on each device.}
3 _{All functional non-supply pins are internally clamped to VSS and VDD}
4 _{Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate}
resistance values for positive and negative clamp voltages, then use the larger of the two values.
5 _{Power supply must maintain regulation within operating VDD range during instantaneous and operating maximum current}
conditions. If positive injection current (V_IN > V_DD) is greater than I_DD, the injection current may flow out of V_DD and could result
in external power supply going out of regulation. Ensure external V_DD load will shunt current greater than maximum injection
current. This will be the greatest risk when the MCU is not consuming power. Examples are: if no system clock is present, or
if clock rate is very low (which would reduce overall power consumption).
6 _{RAM retention is tested at or below the POR re-arm voltage level.}
7 _{Maximum is highest voltage that POR will occur.}
8 _{Simulated, not tested}
9 _{Factory trimmed at VDD = 5.0 V, Temp = 25°C}
MC9S08SG8 MCU Series Data Sheet, Rev. 0
Freescale Semiconductor
PRELIMINARY
279