S9S12GN32F0MLC Datasheet, PDF (1229/1292 Pages) Freescale Semiconductor, Inc – MC9S12G Family Reference Manual and Data Sheet

Electrical Characteristics
A.7.1.15 Program EEPROM (FCMD=0x11)
EEPROM programming time is dependent on the number of words being programmed and their location
with respect to a row boundary since programming across a row boundary requires extra steps.
The typical EEPROM programming time is given by the following equation, where N_W denotes the
number of words:
t_dpgm
≈
⎛
⎝
(
34
⋅
N_W)
⋅
-f-_N----_V--1-_M----_O---_P--
⎞
⎠
+
⎛
⎝
(
600
+
( 940
⋅
N_W))
⋅
-f-_N----_V---_M-1---_B---_U---_S-
⎞
⎠
The maximum EEPROM programming time is given by:
t_dpgm
≈
⎝⎛ ^{( 34}
⋅
N_W)
⋅
f--_N^----_V^--1-_M^----_O^---_P^--
⎞
⎠
+
⎝⎛ ^{( 600}
+
( 1020
⋅
N_W ))
⋅
f--_N^----_V^---_M^-1---_B^---_U^---_S^-
⎞
⎠
A.7.1.16 Erase EEPROM Sector (FCMD=0x12)
Typical EEPROM sector erase times, expected on a new device where no margin verify fails occur, is given
by:
t_dera ≈ 5025 ⋅ _f--N----_V--1-_M----_O---_P-- + 710 ⋅ _f--N----_V---_M-1---_B---_U---_S-
Maximum EEPROM sector erase times is given by:
t_dera ≈ 20400 ⋅ _f--N----_V--1-_M----_O---_P-- + 750 ⋅ _f--N----_V---_M-1---_B---_U---_S-
The EEPROM sector erase time is ~5ms on a new device and can extend to ~20ms as the flash is cycled.
Freescale Semiconductor
MC9S12G Family Reference Manual, Rev.1.23
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