M14D128168A-2M Datasheet, PDF (15/59 Pages) Elite Semiconductor Memory Technology Inc. – Internal pipelined double-data-rate architecture; two data access per clock cycle

ESMT
M14D128168A (2M)
ODT DC Electrical Characteristics
Parameter
Rtt effective impedance value for 75Ω setting
EMRS(1) [A6, A2] = 0, 1
Rtt effective impedance value for 150Ω setting
EMRS(1) [A6, A2) = 1, 0
Rtt effective impedance value for 50Ω setting
EMRS(1) [A6, A2] = 1, 1
Deviation of VM with respect to V_DDQ /2
Symbol
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
△VM
Min.
60
120
40
-6
Typ.
75
150
50
-
Max.
Unit
90
Ω
180
Ω
60
Ω
+6
%
Note:
Measurement Definition for Rtt(eff) :
Rtt(eff) is determined by separately applying VIH(AC) and VIL(AC) to test pin, and then measuring current I(VIH(AC)) and
I(VIL(AC)) respectively.
Measurement Definition for △VM :
Measure voltage (VM) at test pin with no load.
Elite Semiconductor Memory Technology Inc.
Publication Date : Mar. 2013
Revision : 1.4
15/59