English
Language : 

S1X70000 Datasheet, PDF (28/379 Pages) Epson Company – STANDARD CELL / EMBEDDED ARRAY
Chapter 1 Overview
Table 1-23 Quiescent-Current Values of Basic Cell-Type RAM for Each Transistor Type
(Common to 1-port RAM and 2-Port RAM, VDD = 1.95 V, Tj = 85°C)
Standard 1
64Word
128Word
192Word
256Word
Unit
8 Bit
3.47×10-6
6.08×10-6
8.70×10-6
11.31×10-6
A
16 Bit
5.22×10-6
9.19×10-6
13.16×10-6
17.13×10-6
A
24 Bit
6.96×10-6
12.29×10-6
17.63×10-6
22.96×10-6
A
32 Bit
8.71×10-6
15.40×10-6
22.09×10-6
28.79×10-6
A
High-Performance
64Word
8 Bit
2.79×10-3
16 Bit
4.25×10-3
24 Bit
5.72×10-3
32 Bit
7.18×10-3
128Word
4.92×10-3
7.55×10-3
10.19×10-3
12.82×10-3
192Word
7.05×10-3
10.85×10-3
14.66×10-3
18.46×10-3
256Word
9.18×10-3
14.15×10-3
19.13×10-3
24.10×10-3
Unit
A
A
A
A
Low-Leakage
64Word
8 Bit
TBD
16 Bit
TBD
24 Bit
TBD
32 Bit
TBD
128Word
TBD
TBD
TBD
TBD
192Word
TBD
TBD
TBD
TBD
256Word
Unit
TBD
A
TBD
A
TBD
A
TBD
A
1.3.3 Quiescent Current of Cell Based-Type RAM (IQCM)
The quiescent-current values of the Cell Based-type RAMs and ROMs in the S1K70000
series vary depending on the word/bit structure. Therefore, please contact the sales
division of Epson for details.
1.3.4 Quiescent Current of Input/Output Buffers (IQIO)
The quiescent-current values flowing in input/output buffers can be roughly estimated by
using the values listed in Table 1-24 for the calculation formula shown on the next page.
(Make sure the input signals for the input and bi-directional buffers are fixed to VSS or
VDD (LVDD or HVDD). If buffers with pull-up and pull-down resistors have been selected,
leave the pins open.)
For systems with dual power supplies, calculate the quiescent current for the H- and
L-voltage buffers separately.
20
EPSON
STANDARD CELL S1K70000 SERIES
EMBEDDED ARRAY S1X70000 SERIES