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DS80C390 Datasheet, PDF (43/58 Pages) Dallas Semiconductor – Dual CAN High-Speed Microprocessor
MULTIPLEXED 9 CYCLE DATA MEMORY CE0 - 3 WRITE
DS80C390
ELECTRICAL CHARACTERISTICS (Non-multiplexed address/data bus)
40 MHz
VARIABLE CLOCK
PARAMETER
SYMBOL MIN MAX MIN
MAX
UNITS
Oscillator Freq.
(Ext. Osc) 1 / tCLCL 0 40
0
(Ext. Crystal)
1 40
1
40
MHz
40
PSEN Pulse Width
tPLPH
0.5 tMCS - 5
ns
PSEN Low to Valid Instruction In tPLIV
0.5 tMCS - 20
ns
Input Instruction Hold after PSEN tPXIX
0
0
ns
Input Instruction Float after PSEN tPXIZ
See MOVX
ns
characteristics
Port 1 Address, Port 4 CE to
Valid Instruction In
tAVIV1
0.75 tMCS - 20
ns
Port 2, 4 Address to Valid
Instruction In
tAVIV2
0.875 tMCS - 25 ns
NOTES FOR AC ELECTRICAL CHARACTERISTICS:
1. All parameters apply to both commercial and industrial temperature operation unless otherwise noted.
2. The value tMCS is a function of the machine cycle clock in terms of the processor’s input clock
frequency. These relationships are described in the “Stretch Value Timing” table.
3. All signals characterized with load capacitance of 80 pF except Port 0, ALE, PSEN , RD and WR
with 100 pF.
4. Interfacing to memory devices with float times (turn off times) over 25 ns may cause bus contention.
This will not damage the parts, but will cause an increase in operating current.
5. Specifications assume a 50% duty cycle for the oscillator. Port 2 timing will change in relation to
duty cycle variation.
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