IBIS4-6600_09 Datasheet, PDF (4/35 Pages) Cypress Semiconductor – 6.6 MP CMOS Image Sensor

IBIS4-6600 CYII4SM6600AB
Electro Voltaic Response Curve
0.7
Figure 3. Electro Voltaic Response Curve
0.6
0.5
0.4
0.3
0.2
0.1
0
0
5000
10000
15000
20000
25000
# electrons
Figure 3 shows the pixel response curve in linear response mode. This curve is the relation between the electrons detected in the
pixel and the output signal. The resulting voltage-electron curve is independent of any parameters, for example, integration time. The
voltage to electrons conversion gain is 43 µV/electron.
Table 1. Features and General Specifications
Feature
Electronic shutter type
Integration time control
Windowing (ROI)
Sub Sampling Modes
Extended Dynamic Range
Analog Output
Digital Output
Supply Voltage V_DD
Logic Levels
Interface
Package
Specification/Description
Rolling shutter
60 µs - 1/frame period
Randomly programmable ROI read out
Several sub sample modes can be programmed (refer Table 7 on page 12)
Dual slope (up to 90 dB optical dynamic range) and nondestructive read out mode
The output rate of 40 Mpixels/s can be achieved with two analog outputs, each working
at 20 Mpixel/s
Two on-chip 10-bit ADCs at 20 Msamples/s are multiplexed to one digital 10-bit output
at 40 Msamples/s
Nominal 2.5V (some supplies require 3.3V for extended dynamic range)
2.5V
Serial-to Parallel Interface (SPI)
68-pins LCC
Document Number: 001-02366 Rev. *E
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