IBIS4-6600_09 Datasheet, PDF (2/35 Pages) Cypress Semiconductor – 6.6 MP CMOS Image Sensor

IBIS4-6600 CYII4SM6600AB
Specifications
General Specifications
Parameter
Pixel Architecture
Pixel Size
Resolution
Pixel Rate
Shutter Type
Full Frame Rate
Specification
3T-Pixel
3.5 µm x 3.5 µm
2210 x 3002
40 MHz
Electronic Rolling Shutter
5 frames/second
Remarks
The resolution and pixel size results in a 7.74 mm x 10.51 mm
optical active area.
Using a 40 MHz system clock and 1 or 2 parallel outputs
Increases with ROI read out and/or subsampling
Electro Optical Specifications
Parameter
FPN (local)
PRNU (local)
Conversion Gain
Output Signal Amplitude
Saturation Charge
Sensitivity (peak)
Sensitivity (visible)
Peak QE * FF
Peak Spectral Response
Specification
<0.20%
<1.5%
Conversion Gain
0.6V
21.500 e-
411 V.m²/W.s
4.83 V/lux.s
328 V.m²/W.s
2.01 V/lux.s
25%
0.13 A/W
Fill Factor
Dark Current
Dark Signal Non Uniformity
Temporal Noise
S/N Ratio
Spectral Sensitivity Range
Optical Cross Talk
Power Dissipation
35%
3.37 mV/s
78 e-/s
8.28 mV/s
191 e-/s
24 RMS e-
895:1 (59 dB)
400 - 1000 nm
15%
4%
190 mW
Remarks
RMS% of saturation signal
RMS of signal level
At output (measured)
At nominal conditions
At 650 nm
(85 lux = 1 W/m²)
400-700 nm
(163 lux = 1 W/m²)
Average QE*FF = 22% (visible range)
Average SR*FF = 0.1 A/W (visible range)
See the section Spectral Response Curve on page 3.
Light sensitive part of pixel (measured)
Typical value of average dark current of the whole pixel array
(at 21°C)
Dark current RMS value (at 21°C)
Measured at digital output (in the dark)
Measured at digital output (in the dark)
To the first neighboring pixel
To the second neighboring pixel
Typical (including ADCs)
Document Number: 001-02366 Rev. *E
Page 2 of 35
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