W29GL256SH9T-TR Datasheet, PDF (73/88 Pages) Winbond – 256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE

W29GL256S
10.3.2 Asynchronous Read Operations
Table 10-4 Read Operation EVIO = 1.65V to VCC, VCC = 2.7V to 3.6V
Description
Valid Data Output after Address
Read Period Time
Valid data output after #CE Low
Page Access Time
Valid data output after #CE Low
Output Hold time from addresses, #CE or
#OE, Whichever Occurs First
Chip Enable or Output Enable to Output
HIZ¹
Read
Output Enable Hold Time¹ _{Toggle and}
Data# Polling
EVIO=VCC
EVIO=1.65V to VCC
EVIO=VCC
EVIO=1.65V to VCC
EVIO=VCC
EVIO=1.65V to VCC
EVIO=VCC
EVIO=1.65V to VCC
EVIO=VCC
EVIO=1.65V to VCC
EVIO=VCC
EVIO=1.65V to VCC
EVIO=VCC
EVIO=1.65V to VCC
EVIO=VCC
EVIO=1.65V to VCC
EVIO=VCC
EVIO=1.65V to VCC
Note:
1. Not 100% tested.
Symbol VCC=2.7~3.6V
ALT STD Min TYP Max Unit
tACC tAA
90 ns
100 ns
tRC
90
100
ns
ns
tCE
90 ns
100 ns
tPACC tPA
15 ns
25 ns
tOE
25 ns
35 ns
tOH
0
0
ns
ns
tDF
15 ns
20 ns
0
ns
tOEH ¹⁰ ₅
ns
8
Figure 10-5 Back to Back Read (tACC) Operation
Publication Release Date: Jul 02, 2014
Revision C
73