W29GL256SH9T-TR Datasheet, PDF(60/88 Page) Winbond – 256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE

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W29GL256SH9T-TR Datasheet, PDF (60/88 Pages) Winbond – 256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE

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W29GL256S

Table 8-18 CFI Device Geometry Definition

Description

Device size = 2n in number of bytes

Flash device interface description (01=asynchronous x16 only)

Maximum number of bytes in buffer write = 2n (00h, not support)

Number of erase regions within device (01h:uniform, 02h:boot)

Index for Erase Bank Area 1:

[2E,2D] = # of same-size sectors in region 1-1

[30, 2F] = sector size in multiples of 256K-bytes

Index for Erase Bank Area 2

Index for Erase Bank Area 3

Index for Erase Bank Area 4

Address

(SA) + 27h

(SA) + 28h

(SA) + 29h

(SA) + 2Ah

(SA) + 2Bh

(SA) + 2Ch

(SA) + 2Dh

(SA) + 2Eh

(SA) + 2Fh

(SA) + 30h

(SA) + 31h

(SA) + 32h

(SA) + 33h

(SA) + 34h

(SA) + 35h

(SA) + 36h

(SA) + 37h

(SA) + 38h

(SA) + 39h

(SA) + 3Ah

(SA) + 3Bh

(SA) + 3Ch

Data

0019h

0001h

0000h

0009h

0000h

0001h

00FFh

0000h

0002h

0000h

Publication Release Date: Jul 02, 2014

Revision C

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